Surface Modification
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Surface
Surface is the conception against the bulk(inside the crystal). In the result of adhesion and desorption , at the surface layer of the substance, composition becomes different from the bulk or physicality becomes different even its composition is same. At the surface because the row of atom ends, disconnected bond appears. This is called dangling bond. As dangling bond is extremely active, the feature of the surface is dependent on its existence. Surface atoms migrate as the surface energy becomes the smallest.
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Physical evaluation of surface modification in nanoscale
Searching for elemental technology to fabricate nanostructures which enable terabit integration, we have remarked natural phenomenon, self assembly. Our purpose is to illustrate a phenomenon of surface structure, electronic state and those dynamic changes made by one ion in nanoscale.
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Liquid-Metal Ion Source Ion Gun / Ultra High Vacuum Scanning Tunneling Microscope combined system(LM-IG / UHV-STM)
To understand the modification of semiconductor surface induced by ion irradiation in nanoscale, we have developed liquid-metal ion source ion gun and ultra high vacuum scanning tunneling microscope combined system (LM/IG / UHV-STM). This system is able to scan identical area successively during the irradiation. Realization of metal ion irradiation, we are aiming for elucidating the mechanism of semiconductor surface modification induced by dopant used for semiconductor process.
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Past Studies
> Study of Surface Structural Phase Transition under Extremely High Vacuum
> Research on the formation mechanism of Si(111)-DAS structure
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Skill and knowledge of Surface group
STM tip making technique
>Development of tip making apparatus enables to create ultra sharpened tip
Liquid-metal ion source making technique
>Many kinds of ion source making technique including Au-Si liquid-metal ion source
Sample making technique
>Preparing appropriate sample including atomically flat hydrogen terminated Si(111)
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Theme
IG / UHV-STM( low-energy Ion Gun / high-temperature Ultra-High Vacuum STM combined system )
> Real time Ar ion irradiated surface observation on silicon surface with stm
LM-IG / UHV-STM
> Real time Si ion irradiated surface observation on silicon surface with STM
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