2007 Analysis of binding energies between luciferin and luciferase adsorbed on Si surface by docking simulations K. Nishiyama, T. Watanabe, T. Hoshino and I. Ohdomari Chemical Physics Letters, 439, pp.148-150, 2007. A New Kinetic Equation for Thermal Oxidation of Silicon Replacing the Deal-Grove Equation T. Watanabe, and I. Ohdomari Journal of Electrochemical Society, 154, pp.G260-G267, 2007. Selectivity improvement in protein nanopatterning with a hydroxy-terminated self-assembled monolayer template T. Miyake, T. Tanii, K. Kato, T. Zako, T. Funatsu, and I. Ohdomari Nanotechnology, 18, 305304, 2007. Strain Distribution around SiO2/Si Interface in Si Nanowires; A Molecular Dynamics Study H. Ohta, T. Watanabe, and I. Ohdomari Jpn. J. Appl. Phys., 46, pp. 3277, 2007. 2006 New Linear-Parabolic Rate Equation for Thermal Oxidation of Silicon T. Watanabe, K. Tatsumura and I. Ohdomari Phys. Rev. Lett., 96, 196102, 2006. Nanopatterning of Hydroxy-Terminated Self-Assembled Monolayer Taking Advantage of Terminal Group Modification T. Miyake, T. Tanii, K. Kato, T. Hosaka, Y. Kanari, H. Sonobe and I. Ohdomari Chem. Phys. Lett., 426, 361, 2006. Enhancement of field emission characteristics of tungsten emitters by single-walled carbon nanotube modification D. Ferrer, T. Tanii, I. Matsuya, G. Zhong, S. Okamoto, H. Kawarada, T. Shinada and I. Ohdomari Appl. Phys. Lett., 88, 033116, 2006 Analysis of Interactions between Luciferase and Si Substrates Using Molecular Dynamics Simulations K. Nishiyama, T. Watanabe, T. Hoshino and I. Ohdomari Jpn. J. Appl. Phys., 45, pp.1021, 2006 Structural investigation of organosilane self-assembled monolayers by atomic scale simulation H. Yamamoto, T. Watanabe, K. Nishiyama, K. Tatsumura and I. Ohdomari Journal de Physique IV, 132, pp.189, 2006 シリコンナノ構造配列の作製とバイオアプリケーション 谷井孝至, 大泊巌 金属, 76, pp.41, 2006 2005 Enhancing Semiconductor Device Performance Using Ordered Dopant Arrays T.Shinada, S.Okamoto, T.Kobayashi and I.Ohdomari Nature, 437, pp.1128, 2005 Nanoscale patterning of Protein Using Electron Beam Lithography of Organosilane Self-Assembled Monolayers G.-J. Zhang, T. Tanii, T. Zako, T. Hosaka, T. Miyake, Y. Kanari, T. Funatsu and I. Ohdomari Small, 1, pp.833, 2005 A Novel Process for Fabrication of Gateed Silicon Field Emitter Array Taking Advantage of Ion Bombardment Retarded Etching T. Tanii, S. Fujita, Y. Numao, I. Matsuya, M. Sakairi, M. Masahara and I. Ohdomari Jpn. J. Appl. Phys., 44, pp.5191, 2005 Hybridization of Deoxyribonucleic Acid and Immobilization of Green Fluorescent Protein on Nanostructured Organosilane Templates T. Tanii, T. Hosaka, T. Miyake, Y. Kanari, G.-J. Zhang, T. Funatsu and I. Ohdomari Jpn. J. Appl. Phys., 44, pp.5851, 2005 Reactions and Diffusion of Atomic and Molecular Oxygen in the SiO2 Network K. Tatsumura, T. Shimura, E. Mishima, K. Kawamura, D. Yamasaki, H. Yamamoto, T. Watanabe, M. Umeno, I. Ohdomari Phys. Rev. B 72, 045205 (2005). Analysis of Interactions between Green Fluorescent Protein and Sillicon Substrates Using Molecular Dynamics Simulations K. Nishiyama, T. Watanabe, T. Hoshino and I. Ohdomari Jpn. J. Appl. Phys., 44, pp.8210, 2005 Development of liquid-metal-ion source low-energy ion gun / high-temperature ultrahigh vacuum scanning tunneling microscope combined system M. Uchigasaki, T. Kamioka, T. Hirata, T. Shimizu, F. Lin, T. Shinada and I. Ohdomari Rev. Sci. Inst., 76, pp.126109, 2005 ダイナミックボンド型分子動力学法の開発 渡邉孝信 化学工業, 56, pp.65, 2005 2004 Preferential immobilization of biomolecules onto silicon microstructure array by means of electron beam lithography onto organosilane self-assembled monolayer resist T. Tanii, T. Hosaka, T. Miyake, G.-J. Zhang, T. Zako, T. Funatsu, I. Ohdomari Applied Surface Science, 234: 102-106 2004 Attachment of DNA to microfabricated arrays by electron beam lithography G.-J. Zhang, T. Tanii, T. Miyake, T. Funatsu, I. Ohdomari Thin Solid Films, 464-465: 452-455 2004 Electron Beam Lithography on Organosilane Self-Assembled Monolayer Resist T. Tanii, T. Hosaka, T. Miyake, I. Ohdomari Jpn. J. Appl. Phys. Vol.43, No.7A, 4396-4397, Jul. 2004 Improved Interatomic Potential for Stressed Si, O Mixed Systems T. Watanabe, D. Yamasaki, K. Tatsumura, and I. Ohdomari Stressed Si, O Mixed Systems", Appl. Surf. Sci., 234, p.207, 2004 SiO2/Si Interface Structure and its Formation Studied by Large-scale Molecular Dynamics Simulation T. Watanabe and I. Ohdomari Appl. Surf. Sci., 237, p.125, 2004 Patterning of DNA Nanostructures on Silicon Surface by Electron Beam Lithography of Self-Assembled Monolayer G.-J. Zhang, T. Tanii, T. Funatsu, I. Ohdomari Chem. Commun., 786-787, 2004 Selective Growth of Carbon Nanostructures on Nickel Implanted Nanopyramid Array D. Ferrer, T. Shinada, T. Tanii, J. Kurosawa, G. Zhong, Y. Kubo, S. Okamoto, H. Kawarada, I. Ohdomari Appl. Surf. Sci., 234, 72-77, 2004 Selective Deposition of Polystyrene Nano-particles in the Nanoetchpit-Array on a Silicon Substrate M. Tanaka, T. Hosaka, T. Tanii, I. Ohdomari, H. Nishide Chem. Commun., 978-979, 2004 Micropatterning oligonucleotides on single crystal diamond surface by photolithography G.-J. Zhang, H. Umezawa, H. Hata, T. Zako, T. Funatsu, I. Ohdomari, H. Kawarada Jpn. J. Appl. Phys. Vol.44, No.9: L295 - L298, 2005 Si Island Formation on Domain Boundaries Induced by Ar Ion Irradiation on High-Temperature Si(111)-7x7 Dimer-Adatom-Stacking Fault Surface M. Uchigasaki, T. Tomiki, K. Kamioka, E. Nakayama, T. Watanabe, I. Ohdomari Jpn. J. Appl. Phys. Vol.44, No.10, L313-L314, 2005 Hybridization of Deoxyribonucleic Acid and Immobilization of Green Fluorescent Protein on Nanostructured Organosilane Templates T. Tanii, T. Hosaka, T. Miyake, Y. Kanari, G.-J. Zhang, T. Funatsu, I. Ohdomari Jpn. J. Appl. Phys., in press Nanoscale Patterning of Protein Using Electron Beam Lithography of Organosilane Self-Assembled Monolayers G.-J. Zhang, T.tanii, T. Zako, T. hosaka, T. Miyake, Y. Kanari, T. Funatsu, I. Ohdomari Small, 2005 in press. A Novel Process for Fabrication of Gated Silicon Fieled Emitter Array Taking Advantage of Ion Bombardment Ratarded Etching T. Tanii, S. Fujita, Y. Numao, I. Matsuya, M. Sakairi, M. Masahara, I. Ohdomari Jpn. J. Appl. Phys., 2005, in press. 2003 「シングルイオン注入技術と評価」 大泊巌，品田賢宏 応用物理学会結晶工学分科会第8回結晶工学セミナー，47−52，2003年10月 Residual Order within Thermally-Grown Amorphous SiO2 on Crystalline Silicon K. Tatsumura, T. Watanabe, D. Yamasaki, T. Shimura, M. Umeno, I. Ohdomari Phys. Rev. B. Vol. 69, p. 085212. 2004. Large-Scale Atomistic Modeling of Thermally Grown SiO2 on Si(111) Substrate K. Tatsumura, T. Watanabe, D. Yamasaki, T. Shimura, M. Umeno, I. Ohdomari Jpn. J. Appl. Phys. Vol. 43, p. 492, 2004. Effects of Thermal History on Residual Order of Thermally Grown Silicon Dioxide K. Tatsumura, T. Watanabe, D. Yamasaki, T. Shimura, M. Umeno, I. Ohdomari Jpn. J. Appl. Phys. Vol.42, pp.7250-7255, 2003. The immobilization of DNA on microstructured patterns fabricated by maskless lithography G.-J. Zhang, T. Tanii, T. Zako, T. Funatsu, I. Ohdomari sensors & actuators B 97, 243-248, 2004 2002 シングルイオン注入法を用いたナノスケール表面改質 谷井孝至、品田賢宏、大泊巌 機械の研究　第54巻第11号pp.1141-1146 (2002). Improvement of Focused Ion-Beam Optics in Single-Ion Implantation for Higher Aiming Precision of One-by-One Doping of Impurity Atoms into Nano-Scale Semiconductor Devices T. Shinada , H. Koyama , C. Hinosihta , K. Imamura , I. Ohdomari Jpn. J. Appl. Phys. 2. Vol.41(4A), pp.L287-290, March 2002. Diffusion of Molecular and Atomic Oxygen in Silicon Oxide T. Hoshino, M. Hata, S. Neya, Y. Nishioka, T. Watanabe, K. Tatsumura, I. Ohdomari Jp. J. Apl. Phys. 42，pp.3560-3565, 2003. Si結晶表面のナノスケール改質のためのシミュレーション　−初期酸化およびイオン注入素過程の研究− 大泊巌，渡邉孝信 粉砕46号，p.37-44，2002年. Novel Nanoprocess for Vertical Double-Gate MOSFET Fabrication by Ion-Bombardment-Retarded Etching Meishoku Masahara, Takashi Matsukawa, Ken-ichi Ishii, Yongxun Liu, Masayoshi Nagao, Hisao Tanoue, Takashi Tanii, Iwao Ohdomari, Seigo Kanemaru and Eiichi Suzuki Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials, 2002. Fabrication of ultrathin Si Channel Wall For Vertical Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (DG MOSFET) by Using Ion-Bombardment-Retarded Etching (IBRE) Meishoku Masahara, Takashi Matsukawa, Kenichi Ishii, Yongxun Liu, Masayoshi Nagao, Hisao Tanoue, Takashi Tanii, Iwao Ohdomari, Seigo Kanemaru and Eiichi Suzuki J pn. J. Appl. Phys. Vol. 42、pp.1916-1918, April 2003. 2001 Novel process for high-density buried nanopyramid array fabrication by means of dopant ion implantation and wet etching M. Koh, T. Goto, A. Sugita, T. Tanii, T. Iida, T. Shinada, T. Matsukawa and I. Ohdomari Jpn. J. Appl. Phys., 1. Vol.40 (4B), pp.2837-2839, 2001. Nucleation site of Cu on the H-terminated Si(111) surface K. Tatsumura, T. Watanabe, K. Hara, T. Hoshino and I. Ohdomari Phys. Rev. B 64, 115406 (2001). High-temperature real-time obsevation of surface defects induced by single ion irradiation using scanning tunneling microscope/ion-gun combined system K. Shimada, T. Ishimaru, T. Yamawaki, M. Uchigasaki, K. Tomiki, T. Matsukawa and I.Ohdomari J. Vac. Sci. Technol. B Vol.19(5), pp.1989-1994, 2001. Fabrication of adenosite triphosphate-molecule recognition chip by means of bioluminous enzyme luciferase T. Tanii, T. Goto, T. Iida, M. Koh-Masahara and I. Ohdoma Jpn. J. Appl. Phys., 2. Vol.40(10B), pp.L1135-L1137, October 2001. Sinple fabrication of silicon nanopyramids for high performance field emitter array T. Tanii, T. Goto, T. Iida, M. Koh-Masahara and I. Ohdomari Ext. Abst. SSDM, pp.578-579, 2001. Initial oxidation process of Si(111) simulated by using a parallel PC system T. Watanabe, K. Tatsumura, A. Kajimoto, Y. Inaba, K. Ogura and I. Ohdomari Semiconductor Technology (ISTC2001) 1, pp.242-246, 2001. 分子動力学法によるシリコン酸化膜の大規模モデリング 渡邉孝信、辰村光介、大泊　巌 表面科学23巻2号、74-80、2002年2月 Improvement of Focused Ion-Beam Optics in Single-Ion Implantation for Higher Aiming Precision of One-by-One Doping of Impurity Atoms into Nano-Scale Semiconductor Devices Shinada T, Koyama H, Hinosihta C, Imamura K, Ohdomari I Jpn. J. Appl. Phys. 2. Vol.41(4A), pp.L287-290, March 2002. 2000 Reduction of fluctuation in semiconductor conductivity by one-by-one ion implantation of dopant atoms Takahiro Shinada,Atsuki Ishikawa, Chie Hinoshita, Meishoku Koh, and Iwao Ohdomari Jpn. J. Appl. Phys. 39, L265-L268 (2000) Flat-band voltage control of back-gate MOSFET by single ion implantetion Takahiro Shinada, Atsuki Ishikawa, Chie Hinoshita, Meishoku Koh, and Iwao Ohdomari Appl. Surf. Sci. 162-163, 499 (2000) Modeling of SiO2/Si(001) stracture including step and terrace configurations T. Watanabe, and I. Ohdomari Appl. Surf. Sci., 162-163 (2000) 116-121. Rate and activation energy for the formation of various stacking-fault half units in dimer-adatom-stacking-fault structures on quenches Si(111) surfaces T. Ishimaru, T. Hoshino, K. Shimada, T. Yamayaki, and Iwao Ohdomari Phys. Rev. B submitted. Kinetics of dimer-adatom-stacking fault reconstruction on laser quenched Si(111) surfaces K. Shimada, T. Ishimaru, T. Watanabe, T. Yamawaki, and I. Ohdomari Phys. Rev. B 61, 2546 (2000). New process for Si nanopyramid array (NPA) fabrication by means of ion beam irradiation and wet etching M. Koh, S. Sawara, T. Goto, Y. Ando, T. Shinada and I. Ohdomari Jpn. J. Appl. Phys. Vol.39, 2000 Simple nanostructuring of Si surfaces by means of focused beam patterning and wet etching M. Koh, S. Sawara, T. Shinada, T. Goto, A. Ishikawa, and I. Ohdomari to be published in Appl. Surf. Sci., 2000 Simple fabrication of high density concave nanopyramid array (NPA) on Si surface S. Sawara, M. Koh, T. Goto, Y. Ando, T. Shinada, and I. Ohdomari to be published in Appl. Surf. Sci., 2000 1999 Influence of Secondary Electron Detection Efficiency on Controllability of Dopant Ion Number in Single Ion Implantation Takahiro Shinada,Atsuki Ishikawa, Makoto Fujita, Keisuke Yamashita and Iwao Ohdomari Jpn. J. Appl. Phys., Vol.38, pp.3419-3421, 1999. Modeling of SiO2/Si(100) interface structure by using extended Stillinger-Weber potential Takanobu Watanabe and Iwao Ohdomari Thin Solid Films, Vol.343-344, pp.370-373, 1999. Novel Interatomic Potential Energy Function for Si,O Mixed Systems Takanobu Watanabe, Hiroki Fujiwara, Hidekazu Noguchi, Tadatsugu Hoshino and Iwao Ohdomari Jpn. J. Appl. Phys., Vol.38 pp.L366-L369, 1999. Rearrangement of dimers in a DAS structure on Si(111) surface T. Ishimaru, K. Shimada, T. Hoshino, and I. Ohdomari Surf. Sci. Vol.433-435, pp.401-404, 1999. Size changes of n×n stacking-fault half units of dimer-adatom-stacking-fault structures on quenched Si(111) surfaces T. Ishimaru, K. Shimada, T. Hoshino, T. Yamawak, and I. Ohdomari Phys. Rev. B Vol.60, pp.13592-13597, 1999. Consideration on the quantativeness of reflection high energy electron deffraction intensity as a tool to monitor the coverage of the Si(111) surface by 7*7 domains K. Shimada, S. Katsube, T. Ishimaru, H. Kawada, and I. Ohdomari Jpn. J. Appl. Phys. Vol.38, pp.877-880, 1999. Effect on environmental O2 on dynamical process of the Si(111)1*1-7*7 structual phase transition K. Shimada, S. Katsube, T. Ishimaru, H. Kawada, and I. Ohdomari Surf. Sci. Vol.433-435, pp.460-464, 1999. Control of metal nano-structure morphology by means of applied Si potential. Ken-ichi Hara and Iwao Ohdomari Appl. Surf. Sci., Vol.144-145, pp.476-479,1999. Single-Ion Detection using Nuclear Track Detector CR-39 Plastic. Ken-ichi Hara, Meishoku Koh, Takashi Matsukawa, Takashi Tanii and Iwao Ohdomari Rev. Sci. Instrum. Vol.70, pp.4536-4538, 1999. Nucleation and Growth of Cu Adsorbates on Hydrogen-Terminated Si(111) Surface in Solution. Ken-ichi Hara, Takashi Tanii and Iwao Ohdomari Jpn. J. Appl. Phys. Vol.38, pp.6860-6863, 1999. Quantitative characterization of ion induced SiO2/Si interface traps by means of MeV He single ion irradiation M. Koh, K. Igarashi, T.Matsukawa and S. Sawara and I. Ohdomari J. Appl. Phys. Vol.85, pp.7814-7818, 1999. Simple fabrication of nanopyramid array (NPA) on Si surface by means focused ion beam patterning wet etching M. Koh, T. Shinada, S. Sawara, T. Goto, Y. Ando, and I. Ohdomari Ext. Abst. SSDM. pp.184-185. 1999. (Tokyo) Si(111)-n×n構造についての新しい実験事実とその解釈 大泊巌、嶋田一義、石丸哲也 真空、Vol.42, pp.603-607, 1999. 1998 Morphology Control of Cu Clusters Formed on H-Si(111) Surface in Solution by Si Potential. Ken-ichi Hara and Iwao Ohdomari Jpn. J. Appl. Phys. 37(1998)L1333. Influence of oxygen on the formation of Si(111) 7x7 domain studied by scanning tunneling microscopy T. Ishimaru, T. Hoshino, H. Kawada, K. Shimada, T. Watanabe and I. Ohdomari Phys. Rev. B Vol.58, pp.9863-9866, 1998. Reactivity of O2 with Si(111) surfaces with different surface structures Kazuyoshi Shimada, Tetsuya Ishimaru, Satoshi Katsube, Hiroki Kawada, and Iwao Ohdomari Applied Surface Science, Vol. 130-132, pp.170-175, 1998. Stepwise change in Gibbs free energy curve observed in Si(111) DAS domain growth Tetsuya Ishimaru, Kazuyoshi Shimada,Tadatsugu Hoshino,Hiroki Kawada and Iwao Ohdomari Applied Surface Science, Vol. 130-132, pp.18-22, 1998. Effects of fixed particles on periodic adatom arrangements on Si(111) unreconstructed surfaces Takanobu Watanabe, Takahito Handa, Tadatsugu Hoshino, and Iwao Ohdomari Applied Surface Science 130-132 (1998) pp.6-12 The current status of single ion implantation Takahiro Shinada, Yoshinori Kumura, Jun Okabe, Takashi Matsukawa and Iwao Ohdomari Journal of Vacuum Science and Technology B, Vol. 16, pp.2489-2493, 1998. Key technologies of FIB system for single ion implantation Takashi Matsukawa, Takahiro Shinada, Toshinori Fukai, Iwao Ohdomari Journal of Vacuum Science and Technology B, Vol.16, pp.2479-2483, 1998. 1997 Mechanism of H2 desorption from H-terminated Si(001) surfaces Takanobu Watanabe, Tadatsugu Hoshino, Iwao Ohdomari Applied Surface Science, (1997) 117/118, pp.67-71 Consideration of atom movement during Si surface reconstruction Iwao Ohdomari, Takanobu Watanabe, Keita Kumamoto, Tadatsugu Hoshino Phase Transitions, (1997),62, pp.245-258 Monte Carlo study on formation of periodic structures on Si(111) surfaces Takanobu Watanabe, Tadatsugu Hoshino, Iwao Ohdomari Surface Science, (1997), 389, pp.375-381 Theoretical investigation on the formation process of the stacking-fault triangle in the Si(111)-7x7 structure Tadatsugu Hoshino, Nariaki Kamijou, Hiroki Fujiwara, Takanobu Wantanbe, Iwao Ohdomari Surface Science,(1997), 394, pp.119-128 Damage and contamination free fabrication of thin Si wires with highly controlled feature size Takahiro Shinada, Hiroaki Kimura, Yoshinori Kumura, Iwao Ohdomari Applied Surface Science, 117/118(1997) シングルイオン注入と電気化学反応を用いたウェハースケールテクノロジー 原謙一、大泊巌 電子情報通信学会信学技報 ED-97-07, (1997)pp.35-40 シングルイオン照射とその応用 松川 貴、大泊 巌 放射線, 23, pp.25-34, 1997 Development of single-ion implantation - controllability of implanted ion number Takashi Matsukawa, Yoshinori Fukai, Soh suzuki, Kenichi Hara, Meisyoku Koh, Iwao Ohdomari Applied Surface Science, 117/118, pp.677-683, 1997 Three-dimensinal site dependence of single-ion-induced charge collection at a p-n junction - role of funneling and diffusion processes under different ion energy Takashi Matsukawa, Shigetaka Mori, Takashi Tanii, Takuya Arimura, Meisyoku Koh, Kai Igarashi, Takaaki Sugimoto, Iwao Ohdomari Journal of Applied Physics, 83 , to be published on March, 1997 Quantitative characterization of Si/SiO2 interface traps induced by energetic ions by means of single ion microprobe and single ion beam induced charge imaging Meisyoku Koh, Kai Igarashi, Takaaki Sugimoto, Takashi Matsukawa, Shigetaka Mori, Takuya Arimura, Iwao Ohdomari Applied Surface Science, 117/118, pp.171-175, 1997 Estimation of Spatial Extent of a Defect Cluster in Si Induced by Single Ion Irradiation Masato Koyama, Chon-wa Cheong, Koji Yokoyama and Iwao Ohdomari Japanese Journal of Applied Physics, 36, pp.L708-710, 1997 Influence of Near-Surface Defects in Si Induced by Reactive Ion Etching on the Electrical Properties of the Pt/n-Si Interface Masato Koyama, Chon-wa Cheong, Koji Yokoyama, Iwao Ohdomari Japanese Journal of Applied Physics, 36, pp.6682-6686, 1997 1996 Quantitative invetstigation of localized ion irradiation effects in n-channel metal-oxide-semiconductor field-effect transistors using single ion microprobe M. Koh, K.Horita, B.Shigeta, K.igarashi, T.Matsukawa, T.Tanii, S.Mori, and I.Ohdomari Appl.Phys.Letters Vol.68 pp.3467-3469 Quantitative analysis of radiation induced Si/SiO2 interface defects by means of MeV He single ion irradiation M.Koh, B.Shigeta, K.Igarashi, T.Matsukawa, T.Tanii, S.Mori, I.Ohdomari Applied Physics Letters Vol: 68 Iss: 11 p 1552-4 Origin of buckling-dimer-row formation of Si(001) surfaces T.Hoshino, M.Hata, S.Oikawa, M.Tsuda, I.Ohdomari Physical Review B [Condensed Matter] Vol: 54 Iss: 16 p 11331-9 Radiation immunity of pMOSFETs and nMOSFETs examined by means of MeV He single ion microprobe M.Koh, K.Horita, B.Shigeta, T.Matsukawa, A.Kishida, T.Tanii, S.Mori, I.Ohdomari Applied Surface Science Vol: 104-105 p 364-8 Quantitative analysis of degradation in Schottky diode characteristics induced by single ion implantation M.Koyama, Y.Akita, C.Cheong, M.Koh, T.Matsukawa, K.Horita, B.Shigeta, I.Ohdomari Applied Surface Science Vol: 104-105 p 253-6 Nonscalability of alpha-particle-induced charge collection area T.Tanii, T.Matsukawa, S.Mori, M.Koh, B.Shigeta, K.Igarashi, I.Ohdomari Japanese Journal of Applied Physics, Part 2 [Letters] Vol: 35 Iss: 6A p L688-90 Dynamic growth steps of n*n dimer-adatom-stacking-fault domains on the quenched Si(111) surface K.Kumamoto, T.Hoshino, K.Kokubun, T.Ishimaru, I.Ohdomari Physical Review B [Condensed Matter] Vol: 53 Iss: 19 p 12907-11 1995 Mechanism of O2 molecule adsorption and subsequent oxidation of dimers on Si(001) surfaces T.Hoshino, M.Tsuda, S.Oikawa, I.Ohdomari Interface Control of Electrical, Chemical, and Mechanical Properties Symposium p 93-8 Total dose dependence of soft-error hardness in 64 kbit SRAMs evaluated by single-ion microprobe technique T.Matsukawa, A.Kishida, T.Tanii, M.Koh, K.Horita, K.Hara, B.Shigeta, M.Goto, S.Matsuda, S.Kuboyama, I.Ohdomari IEEE Transactions on Nuclear Science Vol: 41 Iss: 6, pt1 p 2071-6 Date: Dec. 1994 Mechanisms of the adsorption of oxygen molecules and the subsequent oxidation of the reconstructed dimers on Si(001) surfaces T.Hoshino, M.Tsuda, S.Oikawa, I.Ohdomari Physical Review B [Condensed Matter] Vol: 50 Iss: 20 p 14999-5008 Date: 15 Nov. 1994 Effect of the adatom presence on stabilizing Si(111)-n*n dimer-adatom-stacking-fault structures K.Kumamoto, T.Hoshino, K.Kokubun, T.Ishimaru, I.Ohdomari Physical Review B [Condensed Matter] Vol: 52 Iss: 15 p 10784-7 Date: 15 Oct. 1995 Critical domain size of the 7*7 structure for nucleation and growth on Si(111) quenched surfaces T.Hoshino, K.Kokubun, H.Fujiwara, K.Kumamoto, T.Ishimaru, I.Ohdomari Physical Review Letters Vol: 75 Iss: 12 p 2372-5 Date: 18 Sept. 1995 Evidence for the leading role of the stacking-fault triangle in the Si(111) 1*1 to 7*7 phase transition T.Hoshino, K.Kumamoto, K.Kokubun, T.Ishimaru, I.Ohdomari Physical Review B [Condensed Matter] Vol: 51 Iss: 20 p 14594-7 Date: 15 May 1995 High-temperature scanning tunneling microscopy(STM) observation of metastable structures on quenched Si(111) surfaces T.Hoshino, K.Kokubun, K.Kumamoto, T.Ishimaru, I.Ohdomari Japanese Journal of Applied Physics, Part 1 [Regular Papers & Short Notes] Vol: 34 Iss: 6B p 3346-50 Date: June 1995 Changes in transition temperature of the Si(111)1*1-7*7 phase transition observed under various oxygen environments K.Tsukui, K.Endo, R.Hasunuma, Hirabayashi.O, N.Yagi, H. Aihara, T.Osaka, I.Ohdomari Surface Science Vol: 328 Iss: 3 p L553-60 Date: 1 May 1995 Technology of Single Ion Implantation I.Ohdomari OyoButuri, 64 p777 (1995) 1994 Development of the single ion beam induced charge(SIBIC) imaging technique using the single ion microprobe system M.Koh, K.Hara, K.Horita, B.Shigeta, T.Matsukawa, A.Kishida, T.Tanii, M.Goto, I.Ohdomari Nuclear Instruments & Methods in Physics Research, Section B [Beam Interactions with Materials and Atoms] Vol: B93 Iss: 1 p82-6 Date: July 1994 Reverse-mode single ion beam induced charge (R-mode SIBIC) imaging for the test of total dose effects in n-ch metal-oxide-semiconductor field-effect transistor (MOSFET) M.Koh, K.Hara-I, K.Horita, B.Shigeta, T.Matsukawa, A.Kiseida, T.Tanii, M.Goto, I.Ohdomari Japanese Journal of Applied Physics, Part 2 [Letters] Vol: 33 Iss: 7A p L962-5 Date: 1 July 1994 Identification of soft-error sensitive junction in SRAM's using a single ion microprobe T.Matsukawa, A.Kishida, M.Koh, K.Hara-I, K.Horita, M.Goto, S.Matsuda, S.Kuboyama, I.Ohdomari IEEE Electron Device Letters Vol: 15 Iss: 6 p 199-201 Date: June 1994 Doping by Single Ion Implantation IOhdomari Proc. 1st Int'1 Symp. Control of Semiconductor Interfaces p223-240 Oxidation mechanism of dimers on Si(001) surfaces T.Hoshino, M.Tsuda, S.Oikawa, I.Ohdomari Proc. 1st Int'1 Symp. Control of Semiconductor Interfaces p221-226 Doping semiconductor Fine Structures by Single Ion Implantation I.Ohdomari, M.Koh, T.Matsukawa, M.Koyama International Conference on Advanced Microelectronic Devices and Processing p697-702 Radiation effects induced by high energy He single ions at Si/SiO2 interfaces M.Koh, K.Hara, K.Horita, B.Shigeta, T.Matsukawa, A.Kishida, T.Tanii, M.Goto, I.Ohdomari Proc. 1st Int'1 Symp. Control of Semiconductor Interfaces p241-246 A trial to detect isolated defects in Si induced by single ion implantation M.Koyama, Y.Akita, H.Kimura, M.Koh, K.Hara, K.Horita, B.Shigeta, I.Ohdomari. Proc. 1st Int'1 Symp. Control of Semiconductor Interfaces p459-460 1993 Extremely high vacuum system for dynamical surface analysis K.Tsukui, K.Endo, R.Hasunuma, T.Osaka, I.Ohdomari, N.Yagi, H.Aihara Journal of Vacuum Science & Technology A [Vacuum.Surfaces, and Films] Vol: 11 Iss: 5 p 2655-8 Date: Sept.-Oct. 1993 Theoretical consideration on dimer vacancy images in the STM observations of Si(001) surfaces in terms of the adsorption of O2 molecules T.Hoshino, M.Tsuda, S.Oikawa, I.Ohdomari Surface Science Vol: 291 Iss: 3 p L763-7 Date: 10 July 1993 Advanced Metallization for ULSI Applications (Formerly Workshop on Tungsten and Other Advanced Metals for ULSI Applications) Proceedings of the Conference V.V.S. Rana, R.V. Joshi, I.Ohdomari Mater. Res. Soc Pittsburgh, PA, USA Date: 1992 xv+580 pp Country of Publication: USA Effect of deuterium anneal on SiO2Si(100) interface traps and electron spin resonance signals of ultrathin SiO2 films H.Fukuda, T.Ueno, H.Kawarada, I.Ohdomari Japanese Journal of Applied Physics, Part 2 [Letters] Vol: 32 Iss: 4B p L569-71 Date: April 1993 Treatment of the wall materials of extremely high vacuum chamber for dynamical surface analysis K.Tsukui, R.Hasunuma, K.Endo, T.Osaka, I.Ohdomari Journal of Vacuum Science & Technology A [Vacuum, Surfaces and Films] Vol: 11 Iss: 2 p 417-21 Date: March-April 1993 Single-event upset test of static random access memory using single-ion microprobe"BR> T.Matsukawa, K.Noritake, M.Koh, K.Hara, M.Goto, I. Ohdomari Japanese Journal of Applied Physics, Part 1 [Regular Papers & Short Notes] Vol: 31 Iss: 12A p 4025-8 Date: Dec. 1992 Ion microprobe system combined with scanning electron microscope for high precision aiming I.Ohdomari, M.Sugimori, M.Koh, K.Noritake, Takiguchi.Y, H. Shimizu, R.Tanaka, T.Kamiya, N.Utsunomiya, E.Minehara Nuclear Instruments & Methods in Physics Research, Section B [Beam Interactions with Materials and Atoms] Vol: B72 Iss: 3-4 p436-41 Date: Dec. 1992 Evaluation of single-event immunity in micro-size device area usingsingle-ion microprobe technique T.Matsukawa, K.Noritake, M.Koh, K.Hara, M.Goto, I.Ohdomari Nucl. Instrum. & Methods B77, pp.239-242 1992 (111) facet formation during lateral solid-phase epitaxy of silicon T.Ueno, K.Kawai, T.Morisawa, T.Hatano, Y.Kunii, I. Ohdomari Japanese Journal of Applied Physics, Part 1 [Regular Papers & Short Notes] Vol: 31 Iss: 8 p 2322-6 Date: Aug. 1992 Process dependence of the SiO2/Si(100) interface trap density of ultrathin SiO2 films H.Fukuda, M.Yasuda, T.Iwabuchi, S.Kaneko, T.Ueno, I. Ohdomari Journal of Applied Physics Vol: 72 Iss: 5 p 1906-11 Date: 1 Sept.1992 Site dependence of soft errors induced by single-ion hitting in 64 kbit static random access memory (SRAM) K.Noritake, T.Matsukawa, M.Koh, Ken-Ichi Hara, M.Goto, I.Ohdomari Japanese Journal of Applied Physics.Part 2 [Letters] Vol: 31 Iss: 6B p 771-3 Date: 15 June 1992 Analysis of atomic-scale structure of microtwins in L-SPE Si by modeling T.Ueno, I.Ohdomari Japanese Journal of Applied Physics, Part 1 [Regular Papers & Short Notes] Vol: 31 Iss: 6A p 1838-41 Date: June 1992 An hypothesis on the role of oxygen in the Si(111)-1*1 to 7*7 phase transition I.Ohdomari Surface Science Vol: 271 Iss: 1-2 p 170-8 Date: 21 May 1992 Quasi in situ observation of Si lateral solid phase epitaxy T.Ueno, K.Kawai, T.Morisawa, T.Hatano, Imai.S, S.Kaneko, I.Ohdomari Applied Surface Science Vol: 56-58 Iss: 1-4, ptA p 27-33 Date: March 1992 A model for nucleation and growth mechanism of Si(111)-7*7 domains in the Si(111)-1*1 matrix I.Ohdomari Applied Surface Science Vol: 56-58 Iss: 1-4, ptA p 20-6 Date: March 1992 Microbeam system for study of single event upset of semiconductor devices T.Kamiya, N.Utsunomiya, E.Minehara, R.Tanaka, I.Ohdomari Nuclear Instruments & Methods in Physics Research, Section B [Beam Interactions with Materials and Atoms] Vol: B64 Iss: 1-4 p 362-6 Date: Feb. 1992 Structure of Si(001) surfaces. II. The electronic structure of the symmetric dimer in the ground state T.Hoshino, S.Oikawa, M.Tsuda, I.Ohdomari Physical Review B [Condensed Matter] Vol: 44 Iss: 20 p 11248-52 Date: 15 Nov. 1991 Structure of Si(001) surfaces. I. The origin of the buckling in the dimer formation on reconstructed surfaces M.Tsuda, T.Hoshino, S.Oikawa, I.Ohdomari Physical Review B [Condensed Matter] Vol: 44 Iss: 20 p 11241-7 Date: 15 Nov. 1991 Operation Characteristics of all Metal Extremely High Vaccum Cryopump N.yagi.M.Aihara.K.Tsukui.I.Ohdomari Semiconductor World 11 p116-119 (1992) Removal of the oxide film on Si surfaceBR> K.Tsukui, I.Ohdomari OyoButuri, 61 p1165 (1992) 1991 Evaluation of SiO<SUB> 2</SUB>/(001)Si interface roughness using high-resolution transmission electron microscopy and simulation H.Akatsu, Y.Sumi, I.Ohdomari Physical Review B [Condensed Matter] Vol: 44 Iss: 4 p 1616-21 Date: 15 July 1991 Mechanism of (111) facet formation during lateral solid phase epitaxy of silicon on amorphous insulator substrates T.Ueno, K.Suzuki, K.Iemura, K.Kawai, T.Morisawa, I. Ohdomari Proceedings of the Fourth International Symposium on Silicon-on-Insulator Technology and Devices p 427-34 Influence of Si surface and interface conditions on solid phase epitaxy of Si I.Ohdomari, T.Ueno Proceedings of the Sixth International Symposium on Silicon Materials Science and Technology: Semiconductor Silicon 1990 p194-201 Ion microprobe system at Waseda University for semiconductor analysis I.Ohdomari, M.Sugimori, M.Koh, K.Noritake, M.Ishikawa, H. Shimizu, R.Tanaka, T.Kamiya, N.Utsunomiya Nuclear Instruments & Methods in Physics Research, Section B [Beam Interactions with Materials and Atoms] Vol: B54 Iss: 1-3 p 71-4 Date: March 1991 Atomic scale structure of microtwins in single crystal Si grown by lateral solid phase epitaxy T.Ueno, T.Showya, I.Ohdomari Journal of Applied Physics Vol: 69 Iss: 2 p 808-11 Date: 15 Jan.1991 1990 Mechanism of dislocation formation during vertical solid phase epitaxy T.Ueno, K.Suzuki, Y.Kunii, I.Ohdomari Journal of Crystal Growth Vol: 102 Iss: 3 p 643-6 Date: May 1990 Elemental composition of beta -SiC(001) surface phases studied by medium energy ion scattering S.Hara, W.FJ. Slijkerman, J.F. van der Veen, I.Ohdomari, S.Misawa, E.Sakuma, S.Yoshida Surface Science Vol: 231 Iss: 3 p L196-200 Date: May 1990 Questions about the Si(111)-(7*7) reconstructed surface I.Ohdomari Surface Science Vol: 227 Iss: 3 p L125-9 Date: March 1990 Thermal stability of supersaturated oxygen-doped silicon epitaxial films A.E.M.J. Fischer, W.F.J. Slijkerman, J.F. van der Veen, I.Ohdomari Applied Surface Science Vol: 44 Iss: 2 p 115-19 Date: April 1990 Solid state reaction of Mo on cubic and hexagonal SiC S.Hara, K.Suzuki, A.Furuya, Y.Matsui, T.Ueno, I.Ohdomari, S.Misawa, E.Sakuma, S.Yoshida, Y.Ueda, S.Suzuki Japanese Journal of Applied Physics, Part 2 [Letters] Vol: 29 Iss 3 p L394-7 Date: March 1990 Structures and properties of metal/semiconductor systems after interface reaction I.Ohdomari, S.Hara Proceedings of the MRS International Meeting on Advanced Materials. Vol.10. Multilayers p 421-30 Structures and properties of semiconductor/insulator interfaces I.Ohdomari Proceedings of the Tokai University International Workshop. The Science of Superconductivity and New Materials p 309-18 HRTEM observation of the Si/SiO2 interface H.Akatsu, I.Ohdomari Applied Surface Science Vol: 41-42 p 357-64 Date: 1989 MECHANISM OF SI PRECIPITATION FROM SI DOPED AL I.Ohdomari, T.Takahashi Mat. Res. Soc. Symp. Proc. VLSI. V. pp391-396 1989 Formation of the Ni-SiC(001) interface studied by high-resolution ion backscattering W.F.J. Slijkerman, A.E.M.J. Fischer, J.F. van der Veen, I.Ohdomari, S.Yoshida, S.Misawa Journal of Applied Physics Vol: 66 Iss: 2 p 666-73 Date: 15 July 1989 Investigation of the (100)Si/amorphous insulator interface structure by a half-period image of a high-resolution electron microscope I.Ohdomari, K.Kai, T.Ueno, K.Suzuki Journal of Applied Physics Vol: 65 Iss: 8 p 3069-71 Date: 15 April 1989 Chemical trend in silicide electronic structure and Schottky-barrier heights of silicide-silicon interfaces S.Hara, I.Ohdomari Physical Review B [Condensed Matter] Vol: 38 Iss: 11 p 7554-7 Date: 15 Oct. 1988 Development of Ion Microprobe at Waseda University Y.Nakata, M.Sugimori, M.Ishikawa, H.Shimizu, I.Ohdomari Bulletin of Sci. and Eng. Research Lab. No124 Investigation of the (100)Si/amorphous insulator interface structure by a half-resolution electron microscope I.Ohdomari, K.Kai, T.Ueno, K.Suzuki J.Appl.Phys. 65 p3069(1989) Copyright © 2005 Ohdomari Laboratory. All Rights Reserved.