T. Shinada, A. Ishikawa, C. Hinoshita, M. Koh, and I. Ohdomari
Jpn. J. Appl. Phys. Vol. 39 , 2000
In order to control electrical characteristics of semiconductor fine structures, several ten single dopant ions were implanted one by one into sub-micron semiconductor regions by means of single ion implantation (SII). The flat-band voltage of the implanted test samples (a back-gate MOSFET) were measured by the extrapolation of the linear part of substrate bias (VBG) - drain current (ID) characteristics to VBG axis. The flat-band voltage decreased linearly with the number of implanted ions. The linear relationship between the flat-band voltage and the number of implanted ions verifies the controllability of device characteristics with the SII. The increase in the flat-band voltage per one dopant atom has been found to be -4.5 mV/ion in this study.