M. Koh, T. Shinada, S. Sawara, T. Goto, Y. Ando and Iwao Ohdomari
Ext. Abst. SSDM, pp.184-185, 1999(Tokyo)
We propose a simple process to fabricate nanopyramid array (NPA) on Si surface by utilizing a newly found phenomenon, that is, retarded etch rate of ion-beam-exposed Si by hydrazine. Two dimensional arrays of dots and lines were written directly on Si substrate with 60-keV focused Si and P ion beam at doses of 1013ミ1015 cm-2. Then Si substrate was dipped in hydrazine solution, where unexposed region was selectively etched by hydrazine. By using these simple processes, 100-nm pyramid arrays with 200-nm interval and 40-nm pyramidal etchpit arrays with 150-nm interval can be fabricated easily. The cause of the retarded etch rate of ion-beam-exposed Si by hydrazine is discussed comprehensively.