Morphology Control of Cu Clusters Formed on H-Si(111) Surface in Solution by Si Potential.

Jpn. J. Appl. Phys. 37(1998)L1333.

Ken-ichi Hara and Iwao Ohdomari

abstract

We have controlled the morphology of Cu clusters formed on H-terminated Si(111) surface in solution by controlling Si potential. At a Si potential of -0.70 eV vs. SHE, Cu wires of 50 nm width were formed along a ridge composed of dihydride Si atoms at the intersections of steps equivalent to [112bar]. In contrast, no Cu morphology was observed along a ravine composed of monohydride Si atoms.