The current status of single ion implantation
Takahiro Shinada, Yoshinori Kumura, Jun Okabe, Takashi Matsukawa and Iwao Ohdomari
J. of Vac. Sci. & Technol. B, (1998),16, pp.2489-2493

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Abstract
The current status of single ion implantation(SII) which has been proposed as a novel technology to suppress the fluctuation in dopant number in fine The current status of single ion implantation(SII) which has been proposed as a novel technology to suppress the fluctuation in dopant number in fine semiconductor structures is reported. The key to control the ion number is to detect secondary electrons(SEs) emitted from a target upon ion incidence. By improving the SE detection system, we have achieved the efficiency of 90% which ensures the reduction in the fluctuation of dopant number to 30% compared to the conventional ion implantation. The improvement for the better SE detection efficiency has turned out to be effective also for the precise beam alignment. The single ion incident position can now be successfully controlled with the error of less than 0.3 micrometer.