Damage and contamination free fabrication of thin Si wires with highly controlled feature
Takahiro Shinada, Hiroaki Kimura, Yoshinori Kumura, Iwao Ohdomari
Appl. Surf. Sci.,117/118(1997)

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Abstract
For the precise control of the electrical conductivity in Si ultrafine structures by single ion implantation (SII), silicon wires with well-defined patterns have been successfully fabricated without introducing damages and contaminations by combining a focused Si ion beam irradiation with the anisotropic etching of Si crystal in a hydrazine-water solution. A silicon ion beam irradiation enhanced the etching rate of the thermally grown SiO2 overlayer on SIMOX (Separation by IMplanted OXygen) Si in HF-water solution. The top-Si was subsequently etched by the hydrazine-water solution with the patterned SiO2 film as a mask. It was confirmed by the four point probe measurement that our technique had no influence on the electrical properties of the Si wires.