Professor Iwao Ohdomari Doctor of Engeneering Date of Birth Feb. 22, 1941 Professional Field Fabrication, characterization and application of nano-structures Radiation effects induced by single ion and its application Teachings Chemical Bond Theory of Solid State Nanotechnology introduction Hobbies Chorus, Sunday Carpentry Cooking(Cury, Smoking-Drying, etc.) Educational Background, Research and Teaching Experience Mar.1965 Graduated from School of Science and Engineering, Waseda University Mar.1967 Finished the master's degree, Waseda University The Central Research Laboratory, Hitachi Ltd., Tokyo Mar.1972 Mar.1972 Finished the doctor's degree, Waseda University Doctor of Engineering Apr.1972 Full-time lecturer in Waseda University Apr.1974-Mar.1979 Associate professor Jul.1977-Oct.1978 Visiting Scientist of IBM T.J. Watson Research Center Apr.1979 - Present Professor. major in Semiconductor Electronics Apr.1987-Sep.1987 Visiting Professor of FOM-AMOLF(The Netherlands) Apr.1992-Mar.1993 Visiting Lecturer of Research Institute of Electrical Communication, Tohoku University 1993-1996 Research Leader, “ Control of Single Particles and Its Application” by Grant-in-Aid for Specially Promoted Research, Ministry of Education, Science, Sports and Culture Apr.1993-Mar.1994 Visiting Professor of Hokkaido University Sep.1996-Sep.1998 Director of Kagami Memorial Laboratory for Materials, Science and Technology, Waseda University 1996-2001 Core Research Member,“ Next-Generation Process Technologies - Wafer-Scale Fabrication Processes of Nano Dots” by Research for the Future, Japan Society for the Promotion of Science 2001-Now Research Leader,“Establishment of Molecular Nano-Engineering by Utilizing Nanostructure Arrays and its Development into Micro-Systems” by Grant-in-Aid for Center of Excellence Program Research, MEXT Jun.2002-Dec.2003 Director of Nanotechnology Research Laboratory, Waseda University Dec.2004-Now Director of Institute for Nanoscience and Nanotechnology, Waseda University Major Activities Outside the University Member of Committee on Grants-in-Aid for Scientific Research, Japan Society for the Promotion of Science Member of Nanotechnology and Materials Science Committee in Council for Science and Technology Research, The Ministry of Education, Culture, Sports, Science and Technology (MEXT) Member of Textbook Authorization and Research Council, Ministry of Education, Culture, Sports, Science and Technology (MEXT) Member of Research and Development Council, Japan Science and Technology Corporation (JST) Publications A Guide to Nanotechnology “ Tokoton Yasasii Nanotechnology no Hon” Iwao OHDOMARI (the author and editor), Nikkan Kogyo Shinbunsha, Tokyo on Mar. 29th, 2002 Dictionary of Nanotechnology Iwao OHDOMARI (the author and editor), Kogyochosakai on Dec. 2003 Research Career 1965 - 1967 Study on Schottky gate field effect transistor 1967 - 1968 Analysis of base resistance of bipolar transistor 1968 - 1972 Study on ion implantation phenomenon in semiconductors, especially radiation-enhanced diffusion of aluminum in silicon. 1972 - 1977 Atomic scale mechanism of solid phase epitaxy of amorphous silicon formed by ion implantation. 1977 - 1978 Study on Schottky barrier of metal-silicide/silicon interfaces 1978- 1987 Study on structure of solid interfaces such as metal-silicide/silicon, SiO2/silicon, amorphous-silicon/silicon and so on by means of high-resolution transmission electron microscopy, modeling of interface atomic arrangement, activation analysis, etc. Apr.-Sep.1987 Study on solid surfaces and interfaces by means of medium energy ion scattering spectroscopy 1987 - 1991 Development of ion microprobe at Waseda University. 1991 - 1992 Development of single ion micorprobe which enables one by one ion irradiation of micron size target area. The machine was completed for the first time in the world, and successfully used to investigate the site dependence of radiation in Si-VLSIs. 1992 - Proposal of the dynamic atomistic model for Si(111)-1x1-7x7 structural phase transition. Development of extremely high vacuum system with a base pressure of 10-13 Torr for surface analysis. 1993 - Proposal of single ion implantaion (SII) method for nano-scale modification of solid surfaces. Copyright © 2005 Ohdomari Laboratory. All Rights Reserved.